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PD - 91376C
IRL2910S/L
Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET(R) Power MOSFET
D
VDSS = 100V RDS(on) = 0.026
G S
ID = 55A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2910L) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
55 39 190 3.8 200 1.3 16 520 29 20 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.

Max.
0.75 40
Units
C/W 10/09/03
IRL2910S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss
Min. 100 1.0 28
Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.026 V GS = 10V, ID = 29A 0.030 V GS = 5.0V, ID = 29A 0.040 V GS = 4.0V, ID = 24A 2.0 V V DS = V GS, ID = 250A S V DS = 50V, ID = 29A 25 V DS = 100V, VGS = 0V A 250 V DS = 80V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 V GS = -16V 140 ID = 29A 20 nC V DS = 80V 81 V GS = 5.0V, See Fig. 6 and 13 V DD = 50V ID = 29A ns RG = 1.4, VGS = 5.0V RD = 1.7, See Fig. 10 Between lead, 7.5 nH and center of die contact 3700 V GS = 0V 630 pF V DS = 25V 330 = 1.0MHz, See Fig. 5
Typ. 0.12 11 100 49 55
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 55 showing the A G integral reverse 190 S p-n junction diode. 1.3 V TJ = 25C, IS = 29A, VGS = 0V 240 350 ns TJ = 25C, IF = 29A 1.8 2.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRL2910 data and test conditions VDD = 25V, starting TJ = 25C, L = 1.2mH RG = 25, IAS = 29A. (See Figure 12) ISD 29A, di/dt 490A/s, VDD V(BR)DSS, T J 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
IRL2910S/L
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
10
10
2.5V
2.5V
1 0.1
20s PULSE WIDTH T J = 25C
1 10
100
A
1 0.1
20s PULSE WIDTH T J = 175C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 48A
I D , Drain-to-Source Current (A)
2.5
100
TJ = 25C TJ = 175C
2.0
1.5
10
1.0
0.5
1 2.0 2.5 3.0 3.5 4.0
V DS = 50V 20s PULSE WIDTH
4.5 5.0 5.5 6.0
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL2910S/L
6000
5000
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd
15
I D = 29A V DS = 80V V DS = 50V V DS = 20V
12
C, Capacitance (pF)
4000
9
3000
Coss
2000
6
Crss
1000
3
0 1 10 100
A
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160
A
200
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
10s
100
100s
TJ = 175C TJ = 25C
10
1ms
10 0.4 0.8 1.2 1.6
VGS = 0V
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms
2.0
100
1000
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL2910S/L
50
V DS
40
RD
VGS RG
ID, Drain Current (Amps)
D.U.T.
+
-VDD
30
5.0V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
A
25 50 75 100 125 150 175
0
TC , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (ZthJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.02 0.01
Notes: 1. Duty factor D = t
P DM
t
1 t2
SINGLE PULSE (THERMAL RESPONSE)
0.0001 0.001 0.01
1
/t
2
0.01 0.00001
2. Peak TJ = P DM x Z thJC + T C
A
10
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL2910S/L
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP
1200
15V
BOTTOM
ID 12A 20A 29A
1000
VDS
L
DRIVER
800
RG
20V
D.U.T
IAS tp
+ V - DD
600
A
0.01
400
Fig 12a. Unclamped Inductive Test Circuit
200
0
VDD = 25V
25 50 75 100 125 150
V(BR)DSS tp
175
A
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2910S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL2910S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L"
INT ERNAT IONAL RECT IFIER LOGO LOT CODE
PART NUMBER F530S DAT E CODE
IRL2910S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT 1- GATE 2- COLLECTOR 3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
IRL2910S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03

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